The n+p material in the question is silicon
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The n+p material in the question is silicon
5. Assuming a contact potential between a n+p...
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm m...
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with elec...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion widt...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion width, and identify the type of contact. Assume 0V bias a. Pt-Silicon (Na b. Ti-Silicon (Nd c. Cu- Silicon (Nd 1e13, Nd 1e3) le 16, Na 1e2) 1e20, Na- 1e3) 6. Sketch a Cross-Section of the following junctions, label the charge of the depletion region and polarity of forward bias. Choose the proper semiconductor and metal for each junction. N-type Tunnel MS Junction P-type Tunnel MS Junction PN...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky ...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
9. An n- type germanium semiconductor sample is brought into contact with a p - type...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity....
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity. (a) What is the majority charge carrier at room temperature? (b) Calculate the resistivity of this material at room temperature. Please show any assumption used in calculation. The mobility of this charge carrier is 700 cm /Vs at room temperature. (e) Show schematically the temperature effects on the mobility, concentration and conductivity of this semiconductor. 6. (20 points) For Mºsc, show schematically (a) the...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
All needed data is given. Please solve clearly.
Problem 7: MS contact n-type Si Consider a contact between NiSi and n-type silicon with N 10 cm maintained at T 300K. (a) Draw the equilibrium 0 V) energy-band diagram, indicating numerical values for the Schottky barrier height Фв , depletion-layer width W, Ec-Ep in the neutral region, and built-in potential li (Note: Use the Schottky barrier value given in Lecture #7) (b) Draw the energy-band diagram for an applied bias V-0.5...
A metal, with a work function Ф,,-41 V, is deposited on an n-type silicon semiconductor with electron affinity 4.0V and energy bandgap 1.12eV. Assuming no interface states exist at the junction and operation temperature at 300K. Effective density of states in conduction band (N 3.22 x 10 cm3. Effective density of states in valence band (N) 1.83 x 10" cm 193 A) Sketch the energy band diagram for zero bias for the case when no space charge region exists at...
5. For the following Metal-Semiconductor Contacts, calculate the built-in bias and depletion width, and identify the type of contact. Assume 0V bias a. Pt-Silicon (Na b. Ti-Silicon (Nd c. Cu- Silicon (Nd 1e13, Nd 1e3) le 16, Na 1e2) 1e20, Na- 1e3) 6. Sketch a Cross-Section of the following junctions, label the charge of the depletion region and polarity of forward bias. Choose the proper semiconductor and metal for each junction. N-type Tunnel MS Junction P-type Tunnel MS Junction PN...
2. Design a Schottky Contact with N-type Silicon a. b. c. Identify a metal that farms a Schottky Contact at 0V bias Sketch the Band-bending diagram a 0V bias Sketch the Band-bending diagram for Forward Bias and Reverse Bias, label the polarity of bias. ypes ot Metal-Semiconductor Contacts Metal Metal N-type implies electrons are the majority Conduction band determines MS junction behavior type implies holes are the majority Valence band determines MS junction behavior . . N-type Schottky P-type Schottky...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
9. An n- type germanium semiconductor sample is brought into contact with a p - type silicon sample. The germanium sample has a carrier concentra- tion of 4.5 x 1016cm-3 and the silicon sample has a carrier concentration of 1.0 × 1016cm-3. At 300K the intrinsic carrier concentration of germanium is 2.4 × 1013cm-3 and its band gap is 0.66 eV. At 300K the intrinsic carrier concentration of silicon is 1.45 × 1010cm-3 and its band gap is 1.12 eV....
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
5. (20 points) A Silicon sample contains a small amount (1018 atoms/cm) of phosphorous (P) impurity. (a) What is the majority charge carrier at room temperature? (b) Calculate the resistivity of this material at room temperature. Please show any assumption used in calculation. The mobility of this charge carrier is 700 cm /Vs at room temperature. (e) Show schematically the temperature effects on the mobility, concentration and conductivity of this semiconductor. 6. (20 points) For Mºsc, show schematically (a) the...
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