7.10 Derive the expression for the excess minority hole concentration by solving the diffusion equation in...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
4.15 A PN diode with lengths much larger than the carrier diffusion length such as shown in Fig. 4-18 is called a long-base diode. A short-base diode has lengths much shorter than the diffusion lengths, and its excess carrier concentration is similar to that shown in Fig. 8-6. A uniformly doped short-base Si diode has Nd- 101cm-3and Na 1016cm3. tp n1 us, Dp 10 cms, Dn 30 cm-s, and cross-sectional area10 cm. The length of the quasi-neutral N-type and P-type...
3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p side (see the figure above). b) (5 points) Calculate the...
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Problem 4 (25 points) Consider a silicon pn junction at T-300 K, NA-ND- 1x101° cm3. The minority carrier lifetimes are τ n-0.01 μs and τ p-0.01 us. The junction is forwardbiased with Va 0.6V. The minority carrier diffusion coefficients are Dn-20 cm s, Dp 10 cm Is. n.-1.5x 1010 cm-3 Depletion region n-type p-type a) (10 points) Calculate the excess electron concentration as a function of x in the p...
This is for solid state electronics: Problem 4: Excess electrons and holes are generated at the end of a Si bar (at x=0). The Si is homogeneously doped with P atoms to a concentration of 1017 cm-3. The minority carrier lifetime = 1 μs. The electron diffusion coefficient = 25 cm2/s The hole diffusion coefficient = 10 cm2/s The excess electron and hole concentrations at x=0 are equal to each other and are 1015 cm-3. (a) Write the formula (with...
Consider a silicon pn junction at T = 300 K, NA-Np - 4x106cm. The minority carrier lifetimes are tn = Tp=1 us. The junction is forward biased with V, -0.6V. The minority carrier diffusion coefficients are D = 20 cm²/s, D = 10 cm²/s. n;= 1.5x100cm, kt/e = 0.026V Depletion region n-type p-type a) (5 points) Do we have low-level injection? b) (10 points) Calculate the electron concentration at x = -(Xp + Ln) where L, is the electron diffusion...