Homework Answers
Schottky diode is formed by combining a metal and a semiconductor and the barrier height depends on the combination and type of the metal and semiconductor only. So it is basically a property of the junction and does not change. option 1
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Question 9 3 pts In a Schottkey diode, the barrier height, Pn: Is a property of...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A pl...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is...
THE REVERSE BIAS VOLTAGE APPLIED TO SILICON PN JUNCTION DIODE IS 4V, DOPING CONCENTRATION Na is 10^17 cm^-3, Nd = 10^16 cm^-3, ni = 1.3 x 10^9 cm^-3, temperature T = 273 k find the width of depletion region with the applied reverse voltage please check your answer that it is correct please it is a humble request
Question 1 1 pts Consider a standard diode shown below. Check all the statements that are...
Question 1 1 pts Consider a standard diode shown below. Check all the statements that are true for diodes and diode circuits.ID ip + V- In the forward bias region, the diode current ip is positive. Diodes are made by connecting a p-doped material to an n-doped material, creating a depletion region that causes a barrier to the flow of electricity when the diode is reverse biased. In the non-conducting (or OFF) state of an ideal diode, the diode voltage,...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step ju...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Problem 2: pn Junction – Transient Response
The hole concentration on the n-side of an ideal pn step-junction Si diode at a given instant of time is as shown:a) Is the junction forward or reverse biased? Explain briefly.b) If pn0 = 103 and T = 300K, determine the applied bias, vA.c) Is there a forward or reverse current flowing through the diode? Explain briefly.
Give a physical interpretation to the phenomenon that the (small) reverse current of a pn-junction diode does not increase when the reverse-bias voltage increases (before reaching the breakdown voltage).
Give a physical interpretation to the phenomenon that the (small) reverse current of a pn-junction diode does not increase when the reverse-bias voltage increases (before reaching the breakdown voltage).
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp + SV. Where is the charge 8Q added in response to SV? What is the formula for this voltage tunable capacitance in terms of the PN junction parameters (doping, built-in voltage, applied voltage etc)? Discuss one application of this voltage tunable capacitor.
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on...
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on concentration. From reverse bias Capacitance-Voltage measurement, the following data are obtained. What are the doping concentration and the built-in potential? Hint The capacitance of the Schottky diode is similar to that of p'n junction. e(InP) 8.85 x 1014 F/cm [10 pt 12.4, to C (F/cm) Vr (Volt) 3.60 x 10 -1 2,50 x 10 -3
5. There is a Au (gold) n-type InP Schottky...
3. (40 pts) The capacitance of a silicon pn junction diode with an area 10° cm2 is measured. A plot of 1/C2 vs. the applied voltage Va is shown. The dashed line is extrapolated, continuing the data with a constant slope. From the junction capacitance formula and the dependence of W on Vbi-VA, one can obtain an equation for 1/C (a) If the diode is a one-sided junction, find the doping density on the low side from the measured (estimate...
Question 1 1 pts Consider a standard diode shown below. Check all the statements that are true for diodes and diode circuits.ID ip + V- In the forward bias region, the diode current ip is positive. Diodes are made by connecting a p-doped material to an n-doped material, creating a depletion region that causes a barrier to the flow of electricity when the diode is reverse biased. In the non-conducting (or OFF) state of an ideal diode, the diode voltage,...
Problem 3: pn Junction -- Carrier Concentration Profiles The steady-state carrier concentrations inside a Si pn step junction diode maintained at room temperature are shown in the plot below: п or p (log scale Pp -106 10 102 a) Is the diode forward or reverse biased? Explain briefly. b) Do low-level injection conditions prevail in the quasi-neutral regions of the diode? Explain briefly. c) What are the p-side and n-side net dopant concentrations NA and ND, respectively? d) Determine the...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
DIODE CHARACTERISTICS Objective: The objective of this laboratory is to examine and plot the forward characteristics curve of a p-n junction diode and become familiar with the characteristics of both the p-n junction diode and the light emitting diode (LED). Prelab: Answer the following on a separate sheet of paper. Show your work and box your answers 1. Review the data sheets for the IN4001 p-n junction diode and answer the following a) Determine the maximum forward current and the...
3) Consider a reverse biased PN junction. Let the applied bias change from Vj to Vp + SV. Where is the charge 8Q added in response to SV? What is the formula for this voltage tunable capacitance in terms of the PN junction parameters (doping, built-in voltage, applied voltage etc)? Discuss one application of this voltage tunable capacitor.
5. There is a Au (gold) n-type InP Schottky barrier diode without knowing the doping on concentration. From reverse bias Capacitance-Voltage measurement, the following data are obtained. What are the doping concentration and the built-in potential? Hint The capacitance of the Schottky diode is similar to that of p'n junction. e(InP) 8.85 x 1014 F/cm [10 pt 12.4, to C (F/cm) Vr (Volt) 3.60 x 10 -1 2,50 x 10 -3
5. There is a Au (gold) n-type InP Schottky...
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