The enhancement-load NMOS inverter in Figure 16.5(a) is biased at VDD — 3V. The transistor parameters are k'n = 100μA/V2. VTND= VTNL = 0.4 V, (W/L)D = 16, and (W/L)L = 2. (a) Determine v0 when (i) vI =0.1 V and (ii) vI= 2.6 V. Neglect the body effect, (b) Determine the maximum current and maximum power dissipation in the inverter, (c) Determine the transition point for the driver transistor.
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