Consider a four-input NMOS NAND logic gate with a depletion load similar to the circuit in Figure P16.23. The bias voltage is VDD = 3.3 V, and the threshold voltages are VTND = 0.4 V and VTNL =-0.6 V. The logic 0 output voltage is to be 0.10 V. (a) Using approximation methods, determine KD/KL. (b) The maximum power dissipation in the circuit is to be 100 μ W. Determine (W/L)L and (W/L)D.
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