A six-transistor CMOS SRAM cell is biased at VDD = 2.5 V. The transistor parameters are VT...

A six-transistor CMOS SRAM cell is biased at VDD = 2.5 V. The transistor parameters are VTN = +0.4 V, VTP = - 0.4 V, and Determine the relative width-to-length ratios such that Equations (16.81) through (16.84) are satisfied in terms of read/write requirements.