Problem

Consider the NMOS inverter with enhancement load, as shown in Figure 16.5(a), biased at VD...

Consider the NMOS inverter with enhancement load, as shown in Figure 16.5(a), biased at VDD = 1.8 V. The threshold voltages are VTND = VTNL = 0.4 V. Assume k'n = 100μA/V2. Design the width-to-length ratios such that the output voltage is 0.12 V and the maximum inverter power dissipation is 0.50 mW when v1 = 1.4 V. Neglect the body effect.

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