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Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in Fi...

Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in Figure 16.51. The threshold voltage of each n-channel transistor is VTN = 0.5 V. Neglect the body effect. Design KD/KL of the inverter such that v0 = 0.1 V when: (a) v, = 2.8 V, ɸ = 3.3 V; and (b) v1=ɸ= 2.8 V.

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Solutions For Problems in Chapter 16
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